BLS7G3135L-350P; BLS7G3135LS-350P
LDMOS S-band radar power transistor
Rev. 4 — 1 September 2015
Product data sheet
1. ...
BLS7G3135L-350P; BLS7G3135LS-350P
LDMOS S-band radar power
transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power
transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL
Gp
D
tr
tf
(GHz)
(V)
(W) (dB)
(%)
(ns) (ns)
pulsed RF
3.1
32 350 12 43 5
5
3.3
32 350 12 43 5
5
3.5
32 350 10 39 5
5
1.2 Features and benefits
Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (3.1 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-Band ...