BLS7G3135LS-200
LDMOS S-band radar power transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1...
BLS7G3135LS-200
LDMOS S-band radar power
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Test signal
f (GHz)
VDS
PL
Gp
D tr
tf
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
3.1
32 200 12
48 8
6
3.3
32 200 12
46 8
6
3.5
32 200 12
43 8
6
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability Easy power control Integrated ESD protection High flexibility with respect to pulse formats Internally matched for ease of use (input and output) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band rada...
