BLS9G2729L-350: BLS9G2729LS-350
LDMOS S-band radar power transistor
Rev. 1 — 13 April 2017
Product data sheet
1. Produ...
BLS9G2729L-350: BLS9G2729LS-350
LDMOS S-band radar power
transistor
Rev. 1 — 13 April 2017
Product data sheet
1. Product profile
1.1 General description
350 W LDMOS power
transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 400 mA; in a class-AB demo circuit.
Test signal
f
VDS
PL
Gp
D
(GHz)
(V) (W) (dB) (%)
pulsed RF
2.7 to 2.9
28 320 14
50
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for S-band operations Excellent thermal stability Easy power control Integrated dual sided ESD protection enables excellent off-state isolation High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range from 2.7 G...
