BLS9G2735L-50; BLS9G2735LS-50
LDMOS S-band radar power transistor
Rev. 1 — 6 October 2017
Product data sheet
1. Produc...
BLS9G2735L-50; BLS9G2735LS-50
LDMOS S-band radar power
transistor
Rev. 1 — 6 October 2017
Product data sheet
1. Product profile
1.1 General description
Single ended 50 W LDMOS power
transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB demo test circuit.
Test signal
f
VDS
PL(1dB)
Gp
D
(GHz)
(V) (W)
(dB)
(%)
pulsed RF
2.7 to 3.5
32 45
12 48
1.2 Features and benefits
Single ended Small size High efficiency Excellent ruggedness Designed for S-band operation Excellent thermal stability Easy power control Integrated dual sided ESD protection enables excellent off-state isolation High flexibility with respect to pulse formats Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
...
