Broadband RF power GaN HEMT
CLF1G0035-200P; CLF1G0035S-200P
Broadband RF power GaN HEMT
Rev. 1 — 22 April 2016
Product data sheet
1. Product profi...
Description
CLF1G0035-200P; CLF1G0035S-200P
Broadband RF power GaN HEMT
Rev. 1 — 22 April 2016
Product data sheet
1. Product profile
1.1 General description
The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz.
Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board.
Test signal
f
PL Gp
D
(MHz)
(W) (dB)
(%)
1-Tone CW
1700
200 11
47
2000
200 10
52
2300
200 9
58
1-Tone pulsed [1]
1700
200 14
46
2000
200 14
48
2300
200 13
51
[1] Pulsed RF; tp = 100 s; = 10 %.
Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 600 mA; VDS = 50 V in a class-AB broadband demo board.
Test signal
f (MHz)
PL(PEP) (W)
IMD3 (dBc)
2-Tone CW [1]
1700
120
40
2000
120
45
2300
120
43
[1] 2-Tone CW; f = 100 kHz.
1.2 Features and benefits
Frequency of operatio...
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