Broadband RF power GaN HEMT
CLF1G0060-10; CLF1G0060S-10
Broadband RF power GaN HEMT
Rev. 5 — 18 February 2016
Product data sheet
1. Product profi...
Description
CLF1G0060-10; CLF1G0060S-10
Broadband RF power GaN HEMT
Rev. 5 — 18 February 2016
Product data sheet
1. Product profile
1.1 General description
The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz.
Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 40 mA; VDS = 50 V in a class-AB broadband demo board.
Test signal
f (MHz)
PL Gp (W) (dB)
D (%)
1-Tone CW
200 10 17.7 42.6
500 10 16.7 46.6
1000
10 15
38.7
1500
10 14.3 32.6
2000
10 14.2 32.6
1-Tone pulsed [1]
200 10 18.8 44
500 10 17.8 48.2
1000
10 16.8 39
1500
10 16.7 33.9
2000
10 17
33.2
[1] Pulsed RF; tp = 15 s; = 10 %.
Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 40 mA; VDS = 50 V in a class-AB broadband demo board.
Test signal
f (MHz)
PL(PEP) (W)
IMD3 (dBc)
2-Tone CW [1]
500 5
47.4
1000
5
48.7
1500
5
44.7
2000
5
39.2
...
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