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BLC8G09XS-400AVT Dataheets PDF



Part Number BLC8G09XS-400AVT
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLC8G09XS-400AVT DatasheetBLC8G09XS-400AVT Datasheet (PDF)

BLC8G09XS-400AVT Power LDMOS transistor Rev. 2 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32V; IDq = 880 mA (main); VGS(amp)peak = 0.8 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D .

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