BLC8G20LS-310AV
Power LDMOS transistor
Rev. 5 — 24 November 2017
Product data sheet
1. Product profile
1.1 General de...
BLC8G20LS-310AV
Power LDMOS
transistor
Rev. 5 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
310 W LDMOS packaged asymmetric Doherty power
transistor for base station applications at frequencies from 1900 MHz to 2000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 650 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(dBm) (dB) (%)
(dBc)
1-carrier W-CDMA
1930 to 1995
28
47.5 17
42.5
33 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.65 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent...
