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BLC8G22LS-450AV Dataheets PDF



Part Number BLC8G22LS-450AV
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLC8G22LS-450AV DatasheetBLC8G22LS-450AV Datasheet (PDF)

BLC8G22LS-450AV Power LDMOS transistor Rev. 6 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 450 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 1000 mA (main); VGS(amp)peak = 0.50 V, unless otherwise specified. Test signal f VDS PL(AV) Gp .

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