BLC8G24LS-241AV
Power LDMOS transistor
Rev. 2 — 2 December 2016
Product data sheet
1. Product profile
1.1 General des...
BLC8G24LS-241AV
Power LDMOS
transistor
Rev. 2 — 2 December 2016
Product data sheet
1. Product profile
1.1 General description
240 W LDMOS packaged asymmetric Doherty power
transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V, unless otherwise specified.
Test signal
f
VDS PL(AV)
Gp
D ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
1-carrier W-CDMA
2300 to 2400
28 56
15 44 29 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness High-efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (2300 MHz to 2400 MHz) Asymmetric design to achieve optimum efficiency across the band Lower output capacitance for im...
