BLC9G20LS-120V
Power LDMOS transistor
Rev. 5 — 24 May 2017
Product data sheet
1. Product profile
1.1 General descript...
BLC9G20LS-120V
Power LDMOS
transistor
Rev. 5 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power
transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D
ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%)
(dBc)
2-carrier W-CDMA
1805 to 1880 700 28 30
19.2 31
33 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier; 5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical) Designed for broadband operation (1805 MHz to 1995 MHz) Lower output capacitance for improved performance in Dohe...
