BLC9G20LS-361AVT

BLC9G20LS-361AVT Power LDMOS transistor Rev. 3 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 360 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 28 V; IDq = 400 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 28 47.8 16.4 50 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. Table 2. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 28 V; IDq = 450 mA (main); VGS(amp)peak = 0.6 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 1-carrier W-CDMA 1930 to 19...