BLC9G20XS-160AV
Power LDMOS transistor
Rev. 3 — 24 May 2017
Product data sheet
1. Product profile
1.1 General descrip...
BLC9G20XS-160AV
Power LDMOS
transistor
Rev. 3 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS packaged asymmetric Doherty power
transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo test circuit. VDS = 30 V; IDq = 300 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified.
Test signal
f
VDS PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
30 28
16.6 47
30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier.
1.2 Features and benefits
Excellent ruggedness High-efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Asymmetric design to achieve optimum efficiency across the band Lower output capacitance for improved...
