BLC9G20XS-550AVT
Power LDMOS transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General d...
BLC9G20XS-550AVT
Power LDMOS
transistor
Rev. 3 — 24 November 2017
Product data sheet
1. Product profile
1.1 General description
550 W LDMOS packaged asymmetric Doherty power
transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 1100 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V)
(W)
(dB) (%)
(dBc)
1-carrier W-CDMA
1805 to 1880
28
85
15.4
44.5
34 [1]
[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent digital p...
