BLC9G24XS-170AV
Power LDMOS transistor
Rev. 3 — 24 May 2017
Product data sheet
1. Product profile
1.1 General descrip...
BLC9G24XS-170AV
Power LDMOS
transistor
Rev. 3 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
170 W LDMOS packaged asymmetrical Doherty power
transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
1-carrier W-CDMA
2300 to 2400 30
28
15.5
D (%) 47
ACPR (dBc) 30 [1]
[1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Decoupling leads to enable improved video bandwidth Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protectio...
