BLF6H10L-160; BLF6H10LS-160
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1...
BLF6H10L-160; BLF6H10LS-160
Power LDMOS
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 160 W LDMOS RF power
transistor for base station applications. The
transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for base station applications.
Table 1. Typical performance
RF performance at VDS = 50 V in a common-source Class-AB test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
(MHz)
(mA) (V) (W)
(dB)
2-carrier W-CDMA
960
600 50 38
20
D (%) 34
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF.
ACPR (dBc) 32[1]
1.2 Features and benefits
Integrated ESD protection Excellent ruggedness High power gain High efficiency Excellent reliability Easy power control Low Rth providing excellent thermal stability Low output capacitance for wideband performance in Doherty applicati...
