BLF7G10L-250; BLF7G10LS-250
Power LDMOS transistor
Rev. 6 — 7 November 2016
Product data sheet
1. Product profile
1.1...
BLF7G10L-250; BLF7G10LS-250
Power LDMOS
transistor
Rev. 6 — 7 November 2016
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power
transistor for base station applications at frequencies from 869 MHz to 960 MHz.
Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz. Typical RF performance at Tcase = 25 C.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
869 to 894 [1]
1800 30 60
19.5 27.4 35.6
2-carrier W-CDMA
920 to 960 [2]
1800 30 60
19.5 30.5 34
[1] In a common source class-AB application test circuit. [2] In a common source class-AB production test circuit.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (869 MHz to 960 MHz) Lower output capacitance for impro...
