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BLF7G10LS-250 Dataheets PDF



Part Number BLF7G10LS-250
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLF7G10LS-250 DatasheetBLF7G10LS-250 Datasheet (PDF)

BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 6 — 7 November 2016 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz. Typical RF performance at Tcase = 25 C. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W).

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