BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1....
BLF7G20L-90P; BLF7G20LS-90P
Power LDMOS
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power
transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to 1880 MHz and 2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
D ACPR400k
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
CW
1805 to 1880 550 28 84
19 54 -
GSM EDGE
1805 to 1880 550 28 40
19.5 41 61
ACPR600k (dBc) 74
EVMrms (%) 2.5
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1427 MHz to1525 MHz, 1805 MHz to 1880 MHz
and 2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applications Designed...
