BLF7G21L-160P; BLF7G21LS-160P
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
...
BLF7G21L-160P; BLF7G21LS-160P
Power LDMOS
transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power
transistor for base station applications at frequencies from 1800 MHz to 2050 MHz, also suitable for operation at 1495 MHz to 1511 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1930 to 1990 1080 28 45
18 34 30 [1]
1-carrier W-CDMA
1930 to 1990 1080 28 50
18.0 36 34 [2]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broa...
