DatasheetsPDF.com

BLF7G24LS-160P Dataheets PDF



Part Number BLF7G24LS-160P
Manufacturers Ampleon
Logo Ampleon
Description Power LDMOS transistor
Datasheet BLF7G24LS-160P DatasheetBLF7G24LS-160P Datasheet (PDF)

BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k (MHz) (mA) (V) (W) (dB) (%) (dBc) IS-95 2300 to 2400 1200 28 30 18.5 27.5.

  BLF7G24LS-160P   BLF7G24LS-160P



Document
BLF7G24L-160P; BLF7G24LS-160P Power LDMOS transistor Rev. 6 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k (MHz) (mA) (V) (W) (dB) (%) (dBc) IS-95 2300 to 2400 1200 28 30 18.5 27.5 45.5[1] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for broadband operation (2300 MHz to 2400 MHz)  Lower output capacitance for improved performance in Doherty applications  Designed for low memory effects providing.


BLF7G24L-160P BLF7G24LS-160P BLF7G27L-100


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)