BLF8G09LS-270W; BLF8G09LS-270GW
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile...
BLF8G09LS-270W; BLF8G09LS-270GW
Power LDMOS
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal
f
VDS
PL(AV)
Gp
D ACPR5M
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
716 to 728
28 67
20 33 35[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness Device can operate with the supply current delivered through the video leads High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation (716 MHz to 960 MHz) Lower output capacitance for improved perf...
