BLF8G09LS-400PW; BLF8G09LS-400PGW
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profi...
BLF8G09LS-400PW; BLF8G09LS-400PGW
Power LDMOS
transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power
transistor for base station applications at frequencies from 716 MHz to 960 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
716 to 728 3400 28 95
20.6 30 35 [1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; 10 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness Device can operate with the supply current delivered through the video leads High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation Lower output capacitance for improved performance in Doherty applications Decouplin...
