BLF8G10LS-160V
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General des...
BLF8G10LS-160V
Power LDMOS
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power
transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
925 to 960
1100 30 35
19.9 30 38[1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier. Carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Decoupling leads to enable improved video bandwidth (60 MHz typical) Designed for broadband operation (925 MHz to 960 MHz) Lower output capacitance for improved performance in Doherty applications Designed f...
