BLF9G38LS-90P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General desc...
BLF9G38LS-90P
Power LDMOS
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
90 W LDMOS power
transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in the Doherty application demo circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
IS-95
3400 to 3600 28
15.1
12.7 37.0
ACPR (dBc) 37 [1]
[1] Test signal: IS-95; pilot, paging, sync, 6 traffic channels with Walsh codes 8 13; PAR = 9.7 dB at 0.01 % probability.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, re...
