BLP7G22-10
LDMOS driver transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General descri...
BLP7G22-10
LDMOS driver
transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
10W plastic LDMOS power
transistor for base station applications at frequencies from 700 MHz to 2700 MHz.
Table 1. Application performance (multiple frequencies)
Typical RF performance at Tcase = 25 C; IDq = 110 mA; in a class-AB application circuit.
Test signal
f
IDq
VDS PL(AV)
Gp
D
ACPR5M
(MHz) (mA) (V) (W)
(dB) (%) (dBc)
Pulsed CW
2700 110 28 2
14.5 26
-
1-carrier W-CDMA
748 110 28 0.7 27.5 13.5 43 [1]
748 110 28 2
27.5 25
40
2-carrier W-CDMA
2140 110 28 0.7
17.4 13
51
2140 110 28 2
17.4 25
40
[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on CCDF; RF performance at VDS = 28 V; IDq = 110 mA.
1.2 Features and benefits
High efficiency Excellent ruggedness Designed for broadband operation Excellent thermal stability High power gain Integrated ...
