BLP8G21S-160PV
Power LDMOS transistor
Rev. 5 — 28 September 2015
Product data sheet
1. Product profile
1.1 General de...
BLP8G21S-160PV
Power LDMOS
transistor
Rev. 5 — 28 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS
transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.
Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f (MHz)
IDq
VDS PL(AV) Gp
D ACPR
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1880 to 1920
600 28 20
17.5 31 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz.
1.2 Features and benefits
Designed for broadband operation (1880 MHz to 2025 MHz) Decoupling leads to enable improved video bandwidth Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Haz...
