BLF6G13L-250P; BLF6G13LS-250P(G)
Power LDMOS transistor
Rev. 5. — 1 September 2015
Product data sheet
1. Product profi...
BLF6G13L-250P; BLF6G13LS-250P(G)
Power LDMOS
transistor
Rev. 5. — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power
transistor intended for CW applications at a frequency of 1.3 GHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.
Test signal
f
VDS
PL(1dB)
Gp
D
(GHz)
(V)
(W)
(dB)
(%)
CW
1.3 50
250 17
56
1.2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
BLF6G13L(S)-250P(G)
Power LDMOS
transistor
2. Pinning information
Table 2. Pinning Pin Description BLF6G13L-250P (SOT1121A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF6G13LS-250P (SOT11...