BLF6G13L-250P; BLF6G13LS-250P(G)
Power LDMOS transistor
Rev. 5. — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C; IDq = 100 mA; in a class-AB production test circuit.
Test...
