Document
BLF6G15L-500H; BLF6G15LS-500H
Power LDMOS transistor
Rev. 4 — 1 September
Product data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications.
Table 1. Test information
RF performance at VDS = 50 V; IDq = 1.3 A.
Mode of operation
f
(MHz)
2-tone, class-AB
1452 to 1492
DVB-T (8k OFDM)
1452 to 1492
PL(AV) (W) 250 65
Gp (dB) 15 16
D IMD3 (%) (dBc) 34 24 19 -
IMDshldr (dBc) 32 [1]
PAR (dB) 9 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Easy power control Integrated ESD protection Excellent ruggedness H.