BLF10M6135; BLF10M6LS135
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 ...
BLF10M6135; BLF10M6LS135
Power LDMOS
transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
135 W LDMOS power
transistor for industrial applications at frequencies from 700 MHz to 1000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB) (%)
2-carrier W-CDMA
869 to 894
28 26.5
21.0 28.0
ACPR (dBc) 39[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
1.2 Features and benefits
Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifier...
