BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 Gener...
BLF178XR; BLF178XRS
Power LDMOS
transistor
Rev. 5 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power
transistor for broadcast and industrial applications in the HF to 128 MHz band.
Table 1. Application information Test signal
CW pulsed RF
f (MHz) 108 108
VDS
PL
(V) (W)
50 1200
50 1400
Gp (dB) 23 28
D (%) 80 72
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1400 W Power gain = 28 dB Efficiency = 72 %
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 128 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications Broadcast transmit...