Silicon N Channel MOS FET Triode
Silicon N Channel MOS FET Triode
Preliminary Data
q q
BF 543
For RF stages up to 300 MHz preferably in FM applications...
Description
Silicon N Channel MOS FET Triode
Preliminary Data
q q
BF 543
For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BF 543 Marking LDs Ordering Code (tape and reel) Q62702-F1372 Pin Configuration 1 2 3 G D S Package1) SOT-23
Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak current Total power dissipation, TA ≤ 60 ˚C Storage temperature range Channel temperature Ambient temperature range Thermal Resistance Junction - ambient2) Rth JA
≤
Symbol VDS ID
± IGSM
Values 20 30 10 200 150 – 55 … + 150
Unit V mA mW
Ptot Tstg Tch TA
– 55 … + 150 ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BF 543
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Drain-source breakdown voltage ID = 10 µA, – VGS = 4 V Gate-source breakdown voltage ± IGS = 10 mA, VDS = 0
±
Values typ. max.
Unit
V(BR)DS
±V(BR)GSS ± IGSS
20 7 – 2.0 –
– – – 4 0.7
– 12 50 6.0 1.5
V
Gate cutoff current VGS = 6 V, VDS = 0
nA mA V
Drain current VDS = 10 V, VGS = 0 Gate-source pinch-off voltage VDS = 10 V, ID = 20 µA AC Characteristics Forward transconductance VDS = 10 V, ID = 4 mA, f = 1 kHz Gate-1 input capacitance VDS = 10 V, ID = 4 mA, f = 1 MHz Reverse transfer capacitance VDS = 10 V, ID = 4 mA, f...
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