BLF1721M8LS200
Power LDMOS transistor
Rev. 1 — 22 January 2016
Product data sheet
1. Product profile
1.1 General desc...
BLF1721M8LS200
Power LDMOS
transistor
Rev. 1 — 22 January 2016
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power
transistor for various applications such as Industrial, Scientific and Medical (ISM) and industrial heating at frequencies from 1700 MHz to 2100 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; VDS = 28 V; IDq = 1600 mA; in a class-AB demo circuit.
Test signal
f
PL(1dB)
Gp [1]
D [1]
IMD3 [2]
(MHz)
(W)
(dB)
(%)
(dBc)
CW RF
1700 to 1950
223.5
14.9 49.5 35.4
1900 to 2100
215.1
15.3 44.8 26.9
pulsed RF [3]
1700 to 1950
276.0
15.2 55.8 -
1900 to 2100
262.4
15.6 49.5 -
[1] at 1 dB compression. [2] at VDS = 28 V; IDq = 1600 mA; 2-tones; carrier spacing 5 MHz. [3] tp = 100 s; = 10 %.
1.2 Features and benefits
Excellent ruggedness High efficiency Low thermal resistance providing excellent thermal stability Designed for broadband operation Lower output capacit...
