BLC10M6XS200

BLC10M6XS200 Power LDMOS transistor Rev. 1 — 5 December 2016 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz. The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package. Table 1. Typical performance RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 C in a class-AB application circuit. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 440 28 200 21 80 1.2 Features and benefits  High efficiency  Easy power control  Excellent ruggedness  Excellent thermal resistance due to copper flange  Integrated ESD protection  Designed for broadband operation (425 MHz to 450 MHz)  Internally input matched  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF lighting applications in the 425 MHz to 450 MHz ISM band BLC10M6...