BLC2425M9LS250
Power LDMOS transistor
Rev. 3 — 20 December 2016
Product data sheet
1. Product profile
1.1 General des...
BLC2425M9LS250
Power LDMOS
transistor
Rev. 3 — 20 December 2016
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power
transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
The BLC2425M9LS250 is designed for high-power CW applications and is assembled in a high performance plastic package.
Table 1. Typical performance RF performance at VDS = 32 V; IDq = 20 mA; Tcase = 25 C in a class-AB application circuit.
Test signal
f
VDS
PL(AV)
Gp
D
(MHz)
(V) (W)
(dB)
(%)
CW
2450
32 250
18 61
CW pulsed [1]
2450
32 250
18.5 62
[1] tp = 100 s; = 10 %
1.2 Features and benefits
High efficiency Excellent ruggedness Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally input and output matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers fo...