BF556C

DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors FEATURES Low leakage level (typ. 500 fA) High gain Low cut-off voltage. BF556A; BF556B; BF556C handbook, halfpage 2 1 g d s APPLICATIONS Impedance converters in e.g. electret microphones and infra-red detectors VHF amplifiers in oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate‘ DESCRIPTION source CAUTION 3 Top view MAM036 Marking codes: BF556A: M84. BF556B: M85. BF556C: M86. Fig.1 Simplified outline and symbol. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS PARAMETER drain-source voltage (DC) gate-source cut-off voltage drain current BF556A BF556B BF556C Ptot yfs total power dissipation forward transfer admittance up to Tamb = 25 °C VGS = 0; VDS = 15 V ID = 200 µA; VDS = 15 V VGS = 0; VDS = 15 V 3 6 11 − 4.5 7 13 18 250 − mA mA mA mW mS CONDITIONS − −0.5 MIN. MAX. ±30 −7.5 UNIT V V 1996 Jul 29 2 Philips Semiconductors Product specification N-channel silicon junction field-effect transis...