BF570

DISCRETE SEMICONDUCTORS DATA SHEET BF570 NPN medium frequency transistor Product data sheet Supersedes data of 2004 Jan 13 2004 Mar 15 NXP Semiconductors NPN medium frequency transistor Product data sheet BF570 FEATURES Low current (max. 100 mA) Low voltage (max. 15 V) Low feedback capacitance (max. 2.2 pF). APPLICATIONS Monitors Battery equipped applications. DESCRIPTION NPN transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF570 MARKING CODE(1) 61* or B26 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 1 Top view 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BF570 NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency CONDITIONS open emitter open base Tamb ≤ 25 °C IC = 10 mA; VCE = 1 V IC = 40 mA; VCE = 10 V; f = 100 MHz MIN. − − − − 40 490 MAX. 40 15 200 250 − − UNIT V V mA mW MHz 2004 Mar 15 2 NXP Semiconductors NPN medium frequency transistor Product data sheet BF570 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-...