BF579

BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BF579 Marking: G7 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BF579R Marking: GG Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Tstg Value 20 20 3 25 200 150 –55 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 85001 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (5) BF579/BF579R Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage DC forward current transfer ratio Test Conditions –VCE = 20 V, VBE = 0 –VCB = 15 V, IE = 0 –VEB = 3 V, IC = 0 –IC = 1 mA, ...