DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF588 PNP high-voltage transistor
Product specification S...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D067
BF588
PNP high-voltage
transistor
Product specification Supersedes data of 1996 Dec 09 1999 Apr 12
Philips Semiconductors
Product specification
PNP high-voltage
transistor
FEATURES Low feedback capacitance. APPLICATIONS For use in video output stages of black and white and colour television receivers. DESCRIPTION
PNP transistor in a TO-202 plastic package.
NPN complements: BF585 and BF587. PINNING
1 2 3 3
handbook, halfpage
BF588
2
1
PIN 1 2 3 emitter collector base
DESCRIPTION
MBH792
Fig.1 Simplified outline (TO-202) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tmb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − − −65 − −65 MIN. MAX. −350 −350 −5 −100 −200 −100 1.6 5 +150 150 +150 V V V mA mA mA W W °C °C °C UNIT
1999 Apr 12
2
Philips Semiconductors
Product specification
PNP high-voltage
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base VALUE 78 25
BF588
UNIT K/W K/W
CHARACTERISTICS Tj = 25 °C unless otherwise spec...