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BF591 Dataheets PDF



Part Number BF591
Manufacturers NXP
Logo NXP
Description NPN high-voltage transistors
Datasheet BF591 DatasheetBF591 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF591; BF593 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems. DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. 3 handbook, halfpage BF591; BF593 PINNING PIN 1 2 .

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DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF591; BF593 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems. DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. 3 handbook, halfpage BF591; BF593 PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION 2 1 1 2 3 MAM305 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 ICM Ptot hFE peak collector current total power dissipation DC current gain Tamb ≤ 55 °C IC = 20 mA; VCE = 5 V IC = 100 mA; VCE = 6 V open base − − − − 30 30 170 210 300 1.3 − − V V mA W PARAMETER collector-base voltage CONDITIONS open emitter − − 210 250 V V MIN. MAX. UNIT 1997 Jul 02 2 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 55 °C open collector open base − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − MIN. BF591; BF593 MAX. 210 250 170 210 5 150 300 100 1.3 +150 150 +150 V V V V V UNIT mA mA mA W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 73 UNIT K/W thermal resistance from junction to ambient in free air CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 140 °C IC = 0; VEB = 5 V note 1 IC = 20 mA; VCE = 5 V IC = 100 mA; VCE = 6 V IC = 150 mA; VCE = 7 V Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. 30 30 20 − − − − − − MIN. 1 100 MAX. 50 UNIT nA µA nA 1997 Jul 02 3 Philips Semiconductors Product specification NPN high-voltage transistors PACKAGE OUTLINE BF591; BF593 Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line) E1 P c1 SOT128B P1 HE D L2 L1 L 1 2 bp e1 e E 3 w M Q A c 0 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.4 bp 0.8 0.6 c 0.65 0.5 c1 0.56 0.46 D 8.6 8.4 E 10.1 9.9 E1 10.4 10.0 e 5.08 5 scale e1 2.54 10 mm HE 24.2 23.8 L 13.3 12.2 L1 2.4 2.0 L2(1) max 2.5 P 3.8 3.6 P1 3.9 3.7 Q 1.7 1.5 w 0.25 Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B REFERENCES IEC JEDEC TO-202 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1997 Jul 02 4 Philips Semiconductors .


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