Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF591; BF593 NPN high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES • Low current (max. 150 mA) • High voltage (max. 210 V). APPLICATIONS • Telephone systems. DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package.
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handbook, halfpage
BF591; BF593
PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION
2
1
1 2 3
MAM305
Fig.1
Simplified outline (TO-202; SOT128B) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 ICM Ptot hFE peak collector current total power dissipation DC current gain Tamb ≤ 55 °C IC = 20 mA; VCE = 5 V IC = 100 mA; VCE = 6 V open base − − − − 30 30 170 210 300 1.3 − − V V mA W PARAMETER collector-base voltage CONDITIONS open emitter − − 210 250 V V MIN. MAX. UNIT
1997 Jul 02
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Philips Semiconductors
Product specification
NPN high-voltage transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF591 BF593 VCEO collector-emitter voltage BF591 BF593 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 55 °C open collector open base − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − MIN.
BF591; BF593
MAX. 210 250 170 210 5 150 300 100 1.3 +150 150 +150 V V V V V
UNIT
mA mA mA W °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 73 UNIT K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 140 °C IC = 0; VEB = 5 V note 1 IC = 20 mA; VCE = 5 V IC = 100 mA; VCE = 6 V IC = 150 mA; VCE = 7 V Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.01. 30 30 20 − − − − − − MIN. 1 100 MAX. 50 UNIT nA µA nA
1997 Jul 02
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Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
BF591; BF593
Plastic single-ended leaded (through hole) package; with cooling fin, mountable to heatsink, 1 mounting hole; 3 leads (in-line)
E1 P c1
SOT128B
P1
HE
D
L2
L1
L
1
2
bp e1 e E
3
w M Q A c
0 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.6 4.4 bp 0.8 0.6 c 0.65 0.5 c1 0.56 0.46 D 8.6 8.4 E 10.1 9.9 E1 10.4 10.0 e 5.08
5 scale e1 2.54
10 mm
HE 24.2 23.8
L 13.3 12.2
L1 2.4 2.0
L2(1) max 2.5
P 3.8 3.6
P1 3.9 3.7
Q 1.7 1.5
w 0.25
Note 1. Plastic flash allowed within this zone OUTLINE VERSION SOT128B REFERENCES IEC JEDEC TO-202 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28
1997 Jul 02
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Philips Semiconductors
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