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BF622 Dataheets PDF



Part Number BF622
Manufacturers NXP
Logo NXP
Description NPN high-voltage transistors
Datasheet BF622 DatasheetBF622 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BF620; BF622 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Video output stages. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BF621 and BF623. MARKING TYPE NUMBER BF620 BF622 MARKING CODE DC DA 1 Bo.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BF620; BF622 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Video output stages. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BF621 and BF623. MARKING TYPE NUMBER BF620 BF622 MARKING CODE DC DA 1 Bottom view 2 3 handbook, halfpage BF620; BF622 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 MAM296 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF620 BF622 VCEO collector-emitter voltage BF620 BF622 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open-base − − − − − − − −65 − −65 300 250 5 50 100 50 1.25 +150 150 +150 V V V mA mA mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 300 250 V V MIN. MAX. UNIT 1999 Apr 21 2 Philips Semiconductors Product specification NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 BF620; BF622 VALUE 100 20 UNIT K/W K/W 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cre fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz − − − 50 − − 60 MIN. MAX. 10 10 50 − 600 1.6 − mV pF MHz UNIT nA µA nA 1999 Apr 21 3 Philips Semiconductors Product specification NPN high-voltage transistors PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads BF620; BF622 SOT89 D B A b3 E HE L 1 2 b2 3 c w M b1 e1 e 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 21 4 Philips Semiconductors Product specification NPN high-voltage transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BF620; BF622 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 21 5 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF620; BF622 1999 Apr 21 6 Philips Semiconductors Product specification NPN high-voltage transistors NOTES BF620; BF622 1999 Apr 21 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: H.


BF621 BF622 BF623


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