BF660W

BF 660W PNP Silicon RF Transistor For VHF oscillator applications Type BF 660W Marking Ordering Code LEs Q62702-F1568 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 30 40 4 25 5 mW 280 150 - 65 ... + 150 °C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj Tstg TS ≤ 93 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 205 K/W Semiconductor Group 1 Aug-14-1996 BF 660W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 30 - V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 40 IC = 10 µA, IE = 0 Base-emitter breakdown voltage V(BR)EBO 4 IE = 10 µA, IC = 0 Collector-base cutoff current ICBO 50 nA 30 - VCB = 20 , IE = 0 DC current gain hFE IC = 3 mA, VCE = 10 V AC Characteristics Transition frequency fT 700 0.4 0.15 - MHz pF - IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, VBE = vbe = 0 , f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0 , f = 1 MHz Semiconductor Group 2 Aug-14-1996 BF 660W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 TS 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Lo...