BF721

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE:BF720 PARTMARKING DETAILS:BF721 BF721 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j :T stg VALUE -300 -300 -5 -100 -50 -2 -55 to +150 UNIT V V V mA mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base BF721 Breakdown Voltage Collector-Emitter BF721 Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL V (BR)CBO MIN. -300 TYP. MAX. UNIT V CONDITIONS. I C=-10 µ A, I E=0 V (BR)CEO -300 V I C=-1mA, I B=0* V (BR)EBO -5 -10 -50 -10 -10 -0.6 -0.9 -50 100 0.8 V nA nA µA I E=-100 µ A, I C=0 V CB=-200V, I E=0 † Collector Cut-Off Current I CBO Collector Cut-Off Current I CER VCE=-200V, RBE=2.7KΩ VCE=-200V, RBE=2.7KΩ † V EB=-5V, I C=0 I C=-30mA, I B=-5mA* I C=-20mA, I B=-2mA* I C=-25mA, V CE=-20V* Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance V CE(sat) V BE(sat) h FE fT C obo µA V V MHz pF I C=-10mA, V CE=-10V f=100MHz V CB=-30V, f=1MH...