PNP Silicon High-Voltage Transistors
BF 721 BF 723
q q q q q
Suitable for video output stages in TV sets and switchin...
PNP Silicon High-Voltage
Transistors
BF 721 BF 723
q q q q q
Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 720/722 (
NPN)
Type BF 721 BF 723
Marking BF 721 BF 723
Ordering Code (tape and reel) Q62702-F1239 Q62702-F1309
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipation, TS ≤ 110 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol BF 721 VCE0 VCER VCB0 VEB0 IC ICM Ptot Tj Tstg – 300 300 5
Values BF 723 250 – 250 5 50 100 1.5 150
Unit V
mA W ˚C
– 65 … + 150
87 27
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
07.94
BF 721 BF 723
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BF 723 Collector-emitter breakdown voltage IC = 10 µA, RBE = 2.7 kΩ BF 721 Collector-base breakdown voltage IC = 10 µA, IB = 0 BF 721 BF 723 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 Collector-emitter cutoff current VCE = 200 V, RBE = ...