BF747

DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor FEATURES Stable oscillator operation High current gain Good thermal stability. handbook, halfpage BF747 DESCRIPTION Low cost NPN transistor in a plastic SOT23 package. 3 APPLICATIONS It is intended for VHF and UHF TV-tuner applications and can be used as a mixer and/or oscillator. PINNING PIN 1 2 3 base emitter collector DESCRIPTION Marking code: E15. 1 Top view 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCEO VCBO VEBO ICM Ptot fT Note 1. Ts is the temperature at the soldering point of the collector pin. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCEO VCBO VEBO ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation storage temperature junction temperature up to Ts = 70 °C; note 1 open base open emitter open collector CONDITIONS MIN. MAX. UNIT − − − − − −55 − 20 30 3 50 300 150 V V V mA mW °C PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation transition frequency up to Ts = 70 °C; note 1 IC = 15 mA; VCE = 10 V; f = 500 MHz open base open emitter open co...