BF763

DISCRETE SEMICONDUCTORS DATA SHEET BF763 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is primarily intended for use in RF amplifiers and oscillators. PINNING PIN 1 2 3 DESCRIPTION Code: F763 emitter base collector 1 2 3 BF763 MSB034 Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL V(BR)CEO IC Ptot hFE fT PARAMETER collector-emitter breakdown voltage open base DC collector current total power dissipation DC current gain transition frequency up to Tamb = 60 °C IC = 5 mA; VCE = 10 V; Tj = 25 °C CONDITIONS MIN. 15 − − 25 TYP. − − − − 1.8 MAX. − 25 360 250 − GHz UNIT V mA mW IC = 5 mA; VCE = 10 V; f = 100 MHz − LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation storage temperature junction temperature up to Tamb = 60 °C open base CONDITIONS open emitter − − − − −65 − MIN. MAX. 15 25 25 360 150 150 UNIT V V mA mW °C °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air CONDITIONS THERMAL RESISTANCE 250 K/W September 1995 2 Philips Semiconductors Product specification NPN 2 GHz wideband transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)...