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BF 772
NPN Silicon RF Transistor • For application in TV-sat tuners
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 772 RAs Q62702-F1222 1=C 2=E 3=B 4=E
Package SOT-143
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150 - 65 ... + 150 - 65 ... + 150 ≤ 135 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 72 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
BF 772
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 30 mA, VCE = 8 V
Semiconductor Group
2
Dec-13-1996
BF 772
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
6 8 0.6 0.3 1.8 -
GHz pF 0.9 dB 1.3 2.1 -
IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 14.5 8.5 17.5 11.5 -
IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
.