BF819

DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF819 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN high-voltage transistor FEATURES Low current (max. 100 mA) High voltage (max. 250 V). APPLICATIONS Driver for a line output transistor in colour television receivers. handbook, halfpage BF819 PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION DESCRIPTION NPN high-voltage transistor in a TO-202; SOT128B plastic package. 3 1 2 1 2 3 MAM305 Fig.1 Simplified outline (TO-202; SOT128B) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cre fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tamb ≤ 75 °C IC = 20 mA, VCE = 10 V IC = ic = 0; VCB = 30 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS − − − − 45 − 90 TYP. MAX. 300 250 300 6 − 3.5 − pF MHz V V mA W UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN high-voltage transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation stor...