BF820

DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors NPN high-voltage transistors Product data sheet BF820; BF822 FEATURES Low current (max. 50 mA) High voltage (max. 300 V). APPLICATIONS Telephony and professional communication equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BF821; BF823. MARKING TYPE NUMBER BF820 BF822 MARKING CODE(1) 1V* 1X* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPENUMBER BF820 BF822 NAME − − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads VERSION SOT23 SOT23 2004 Jan 16 2 NXP Semiconductors NPN high-voltage ...